![Electronics | Free Full-Text | The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology Electronics | Free Full-Text | The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology](https://pub.mdpi-res.com/electronics/electronics-11-00546/article_deploy/html/images/electronics-11-00546-g002.png?1645261125)
Electronics | Free Full-Text | The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology
![Electronics | Free Full-Text | The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology Electronics | Free Full-Text | The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology](https://www.mdpi.com/electronics/electronics-11-00546/article_deploy/html/images/electronics-11-00546-g001.png)
Electronics | Free Full-Text | The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology
![Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/a4bb9ffde2252a6d6f877188410ad5e10e2d55d4/1-Figure1-1.png)
Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar
![Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology - ScienceDirect Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0026271414000304-gr6.jpg)
Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology - ScienceDirect
![Mix‐mode forward‐biased diode with low clamping voltage for robust ESD applications - Qi - 2020 - Electronics Letters - Wiley Online Library Mix‐mode forward‐biased diode with low clamping voltage for robust ESD applications - Qi - 2020 - Electronics Letters - Wiley Online Library](https://ietresearch.onlinelibrary.wiley.com/cms/asset/ae28008b-a9e8-49b2-b081-692bbf107f56/ell2bf06958-fig-0001-m.jpg)
Mix‐mode forward‐biased diode with low clamping voltage for robust ESD applications - Qi - 2020 - Electronics Letters - Wiley Online Library
![Figure 1 from Measurement on snapback holding voltage of high-voltage LDMOS for latch-up consideration | Semantic Scholar Figure 1 from Measurement on snapback holding voltage of high-voltage LDMOS for latch-up consideration | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/bc1de9486ae6f65f8bea2d11c9bbfc27ba65becc/1-Figure1-1.png)
Figure 1 from Measurement on snapback holding voltage of high-voltage LDMOS for latch-up consideration | Semantic Scholar
![Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/a4bb9ffde2252a6d6f877188410ad5e10e2d55d4/2-Figure2-1.png)